Toshiba's new high-efficiency power supply 1200V silicon carbide MOSFET
Veröffentlichte Zeit: 2020-10-19 16:55:57
On October 19, 2020, Toshiba Electronic Components and Storage Corporation ("Toshiba") today announced the launch of a new 1200V silicon carbide (SiC) MOSFET --- "TW070J120B". The product is oriented to industrial applications (including high-capacity power supplies), and will start shipping today
The new product adopts Toshiba's second-generation chip design and production , which can improve the reliability of silicon carbide MOSFETs, and realizes the characteristics of low input capacitance, low gate input charge, and low drain-source on-resistance. Compared with the 1200V silicon insulated gate bipolar transistor (IGBT) "GT40QR21" introduced by Toshiba, the "TW070J120B" turn-off switching loss is reduced by about 80%, the switching time (fall time) is shortened by about 70%, and it can be used at no more than 20A[ 2] provides low turn-on voltage under drain current.
Its gate threshold voltage is set in a higher voltage range of 4.2V to 5.8V, which helps reduce the risk of failure (unexpected opening or closing). In addition, the built-in silicon carbide Schottky barrier diode (SBD) with low forward voltage also helps reduce power loss.
In industrial applications such as large-capacity AC-DC converters, photovoltaic inverters, and large-capacity bidirectional DC-DC converters, this new type of MOSFET will not only improve efficiency by reducing power loss, but will also reduce equipment The size contributes.
・Large capacity AC-DC converter
・Large capacity bidirectional DC-DC converter
・2nd generation chip design (built-in silicon carbide SBD)
・High voltage, low input capacitance, low total gate charge, low on-resistance, low diode forward voltage, high gate threshold voltage:
VDSS=1200V, Ciss=1680pF (typical value), Qg=67nC (typical value),
RDS(ON)=70mΩ (typical value), VDSF=-1.35V (typical value), Vth=4.2～5.8V
・Enhanced type is easy to operate