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Startseite > Technologies Of Toshiba Semiconductor

Technologies Of Toshiba Semiconductor

  • 20V MOSFETs are housed in SOT-23F packages
    • 20V MOSFETs are housed in SOT-23F packages

      20V MOSFETs are available in SSM3K344R, SSM3K345R, SSM3J355R and SSM3J358R models. Unit is suitable for PCs, laptops and tablets applications and helps to consume low power. Product uses low voltage trench structure process and offers power dissipation rate of...

    • Veröffentlichte Zeit: 2020-01-17 Einzelheiten ›
  • N-Channel Power MOSFETs provide low switching noise.
    • N-Channel Power MOSFETs provide low switching noise.

      Suitable for power supplies, motor drives, DC-DC and AC-DC converters applications, 40V/45V N-Channel Power MOSFETs with optimized cell structures suppresses spike voltage and ringing during switching. Unit uses U-MOS IX-H low-voltage trench structure for impr...

    • Veröffentlichte Zeit: 2020-01-17 Einzelheiten ›
  • Load Switch ICs are designed for USB Type-C devices.
    • Load Switch ICs are designed for USB Type-C devices.

      With 3 A max output current and 28 V max input voltage, TCK30x series suits devices conforming to USB Type-C™ specifications (for USB PD). Products comes in 0.5 mm pitch, 1.5 x 1.5 mm WCSP, support auto-power source select mode without need for external ...

    • Veröffentlichte Zeit: 2020-01-14 Einzelheiten ›
  • Smart Gate Driver Photocoupler  offers embedded protection.
    • Smart Gate Driver Photocoupler offers embedded protection.

      Housed in thin SO16L package, Model TLP5214 drives medium-power IGBTs and power MOSFETs. Maximum propagation delay time of 150 ns and propagation delay skew of ±80 ns are provided within defined operating temperature range up to 110°C. To prevent IGBT from rea...

    • Veröffentlichte Zeit: 2020-01-09 Einzelheiten ›
 

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